1 of 3 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . ordering information bifet hbt ldmos output input +vb RFPD2580 45mhz to 1200mhz gaas/gan power doubler hybrid the RFPD2580 is a hybrid power do ubler amplifier module. the part employs gaas phemt die an d gan hemt die, has hi gh output capability, and operates from 45mhz to 1200mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. features ? excellent linearity ? superior return loss perfor- mance ? extremely low distortion ? optimal reliability ? low noise ? unconditionally stable under all terminations ? extremely high output capa- bility ? 22.5db min. gain at 1200mhz ? 450ma max. at 24v dc applications ? 45mhz to 1200mhz catv amplifier systems ds100428 9 9 package: sot-115j RFPD2580 45mhz to 1200mhz gaas/gan power dou- bler hybrid RFPD2580 45mhz to 1200mhz gaas/gan power doubler hybrid
2 of 3 RFPD2580 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . absolute maximum ratings parameter rating unit rf input voltage (single tone) 55 dbmv dc supply over-voltage (5 minutes) 30 v storage temperature -40 to +100 c operating mounting base tempera- ture -30 to +100 c parameter specification unit condition min. typ. max. overall v b = 24v, t mb =30c, z s =z l =75 power gain 21.0 21.5 22.0 db f = 45 mhz 22.5 23.0 24.0 db f=1200mhz slope [1] 1.0 1.5 2.5 db f=45mhz to 1200mhz flatness of frequency response 0.8 db f=45mhz to 1200mhz input return loss -20 db f=45mhz to 320mhz -19 db f=320mhz to 640mhz -17 db f=640mhz to 870mhz -16 db f=870mhz to 1000mhz -15 db f=1000mhz to 1200mhz output return loss -20 db f=45mhz to 320mhz -19 db f=320mhz to 640mhz -18 db f=640mhz to 870mhz -17 db f=870mhz to 1000mhz -16 db f=1000mhz to 1200mhz noise figure 3.5 4.5 db f=50mhz to 1200mhz total current consumption (dc) 420.0 450.0 ma distortion data 40mhz to 550mhz v b = 24v, t mb =30c, z s =z l =75 , vo=56.4dbmv at 1000mhz, 13.4db extrapolated tilt, 79 analog channels plus 75 digital channels (- 6db offset) [2] ctb -77 -74 dbc xmod -71 -68 dbc cso -71 -68 dbc cin 63 66 db 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, ntsc frequency raster: 55.25mhz to 547.25 mhz, +43dbmv to +50dbmv tilted output level, plus 75 digital ch annels, -6db offset relative to the equivalent analog carrier. composite second or der (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by th e ncta. cross modulation (xmod) - cross modulation (xmod) is me asured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is defined by ansi/scte 17 (test procedure for carrier to noise). caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. rohs status based on eudirective2002/95/ec (at time of this document revision). the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice.
3 of 3 RFPD2580 ds100428 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . package drawing
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